类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大耗散功率(Abs) | 场效应管特性 | 栅源电压 | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NTLJD3181PZTBG | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LAST SHIPMENTS (Last Updated: 1 week ago) | 表面贴装 | 表面贴装 | 6-WDFN Exposed Pad | 6 | SILICON | 2 | 14 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | e3 | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 710mW | 无铅 | 未说明 | 未说明 | 6 | 不合格 | Dual | 增强型MOSFET | 1.5W | 2 P-Channel (Dual) | SWITCHING | 100m Ω @ 2A, 4.5V | 1V @ 250μA | 450pF @ 10V | 7.8nC @ 4.5V | 9ns | 20V | 9 ns | 2.2A | 8V | 3.2A | 0.1Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||
NTLUD3191PZTBG | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LAST SHIPMENTS (Last Updated: 19 hours ago) | 表面贴装 | 表面贴装 | 6-UFDFN Exposed Pad | 6 | SILICON | 1.1A | 2 | 68 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | e3 | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 500mW | 无铅 | 未说明 | unknown | 未说明 | 6 | 不合格 | Dual | 增强型MOSFET | 500mW | DRAIN | 2 P-Channel (Dual) | SWITCHING | 250m Ω @ 1.5A, 4.5V | 1V @ 250μA | 160pF @ 10V | 3.5nC @ 4.5V | 24ns | 20V | 62 ns | -1A | 8V | 1.1A | 0.25Ohm | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||
TSM6968SDCA RVG | Taiwan Semiconductor Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 6.5A Ta | -55°C~150°C TJ | Digi-Reel® | 2015 | 活跃 | 3 (168 Hours) | 1.04W | 2 N-Channel (Dual) | 22mOhm @ 6.5A, 4.5V | 1V @ 250μA | 950pF @ 10V | 15nC @ 4.5V | 20V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ALD110904PAL | Advanced Linear Devices Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | 12mA 3mA | 10 ns | 0°C~70°C TJ | Tube | 2006 | EPAD® | yes | 活跃 | 1 (Unlimited) | 500mW | unknown | Dual | 500mW | 2 N-Channel (Dual) Matched Pair | 500 Ω @ 4.4V | 420mV @ 1μA | 2.5pF @ 5V | 3mA | 10.6V | 10V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
NTL4502NT1 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 16-PowerQFN | 16 | SILICON | 4 | 22 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e0 | Obsolete | 1 (Unlimited) | 16 | EAR99 | Tin/Lead (Sn90Pb10) | 24V | 1.7W | QUAD | 无铅 | 240 | not_compliant | 15A | 30 | 16 | 不合格 | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2.9W | DRAIN | 4 N-Channel (H-Bridge) | SWITCHING | 11m Ω @ 15A, 10V | 2V @ 250μA | 1605pF @ 20V | 13nC @ 4.5V | 28ns | 6 ns | 11.4A | 20V | 0.013Ohm | 24V | 32A | 80 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||
![]() | NTHD4102PT3G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LAST SHIPMENTS (Last Updated: 2 weeks ago) | 表面贴装 | 8-SMD, Flat Lead | YES | 8 | SILICON | 2 | 32 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | e3 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 逻辑电平兼容 | 1.1W | C 弯管 | 未说明 | 未说明 | NTHD4102P | 8 | 不合格 | Dual | 增强型MOSFET | 1.1W | 2 P-Channel (Dual) | SWITCHING | 80m Ω @ 2.9A, 4.5V | 1.5V @ 250μA | 750pF @ 16V | 8.6nC @ 4.5V | 12ns | 20V | 12 ns | 2.9A | 8V | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||
AON6924 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | 15A 28A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | Obsolete | 1 (Unlimited) | 2.2W | 增强型MOSFET | 2W 2.2W | 2 N-Channel (Half Bridge) | 5.2m Ω @ 20A, 10V | 2.3V @ 250μA | 1560pF @ 15V | 21nC @ 10V | 30V | 28A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NTHD5902T1 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2003 | e0 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Tin/Lead (Sn/Pb) | 30V | 1.1W | C 弯管 | not_compliant | 2.9A | 8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2 N-Channel (Dual) | SWITCHING | 85m Ω @ 2.9A, 10V | 1V @ 250μA | 7.5 nC @ 10V | 12ns | 2.9A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||
SP8J2FU6TB | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Tape & Reel (TR) | 2006 | Obsolete | 1 (Unlimited) | 150°C | 2W | *J2 | 2 P-Channel (Dual) | 56m Ω @ 4.5A, 10V | 2.5V @ 1mA | 850pF @ 10V | 8.5nC @ 5V | 30V | 4.5A | -2.5V | 逻辑电平门 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TSM9926DCS RLG | Taiwan Semiconductor Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8-SOP | 6A Tc | -55°C~150°C TJ | Digi-Reel® | 2015 | 活跃 | 3 (168 Hours) | 1.6W | 2 N-Channel (Dual) | 30mOhm @ 6A, 10V | 600mV @ 250μA | 562pF @ 8V | 7.1nC @ 4.5V | 20V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PHN210,118 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | -65°C~150°C TJ | Tape & Reel (TR) | 2002 | TrenchMOS™ | Obsolete | 1 (Unlimited) | 8 | 2W | 2 N-Channel (Dual) | 100m Ω @ 2.2A, 10V | 2.8V @ 1mA | 250pF @ 20V | 6nC @ 10V | 30V | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7324PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 19 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 9A | 2 | -55°C~150°C TJ | Tube | 2004 | HEXFET® | e3 | Discontinued | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 鸥翼 | 260 | 30 | IRF7324PBF | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 P-Channel (Dual) | SWITCHING | 18m Ω @ 9A, 4.5V | 1V @ 250μA | 2940pF @ 15V | 63nC @ 5V | 20V | MS-012AA | 9A | 0.018Ohm | 71A | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||
![]() | IRF7331TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 110 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | HEXFET® | Obsolete | 1 (Unlimited) | 8 | 30MOhm | 20V | 2W | 鸥翼 | 7A | IRF7331PBF | Dual | 增强型MOSFET | 2W | 7.6 ns | 2 N-Channel (Dual) | SWITCHING | 30m Ω @ 7A, 4.5V | 1.2V @ 250μA | 1340pF @ 16V | 20nC @ 4.5V | 22ns | 50 ns | 7A | 1.2V | 12V | 7A | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.2 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||||||||||||||||||||
![]() | IRF7304PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 4.3A | 2 | -55°C~150°C TJ | Tube | 1997 | HEXFET® | e3 | Discontinued | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 逻辑电平兼容 | 鸥翼 | 未说明 | 未说明 | IRF7304PBF | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 P-Channel (Dual) | 90m Ω @ 2.2A, 4.5V | 700mV @ 250μA | 610pF @ 15V | 22nC @ 4.5V | 20V | MS-012AA | 4.3A | 0.09Ohm | 17A | 20V | METAL-OXIDE SEMICONDUCTOR | 1.4W | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
![]() | IRF7907PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 9.1A 11A | 2 | -55°C~150°C TJ | Tube | 2006 | HEXFET® | e3 | Discontinued | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 鸥翼 | 260 | 30 | IRF7907PBF | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 N-Channel (Dual) | 16.4m Ω @ 9.1A, 10V | 2.35V @ 25μA | 850pF @ 15V | 10nC @ 4.5V | 30V | 11A | 0.0118Ohm | 85A | 30V | 15 mJ | METAL-OXIDE SEMICONDUCTOR | 2W | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
TSM200N03DPQ33 RGG | Taiwan Semiconductor Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 8-PowerWDFN | 20A Tc | -55°C~150°C TJ | Digi-Reel® | 2015 | 活跃 | 3 (168 Hours) | 未说明 | 未说明 | 20W | 2 N-Channel (Dual) | 20m Ω @ 10A, 10V | 2.5V @ 250μA | 345pF @ 25V | 4nC @ 4.5V | 30V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF9362TRPBF | Infineon Technologies | 数据表 | 4000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 8A | 2 | 115 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 21MOhm | Matte Tin (Sn) | 2W | 鸥翼 | IRF9362PBF | Dual | 增强型MOSFET | 2W | 5.2 ns | 2 P-Channel (Dual) | SWITCHING | 21m Ω @ 8A, 10V | 2.4V @ 25μA | 1300pF @ 25V | 39nC @ 10V | 5.9ns | 30V | 53 ns | -8A | -1.8V | 20V | 8A | -30V | 64A | 94 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -1.8 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||
![]() | IRF7309PBF | Infineon Technologies | 数据表 | 75 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 4A 3A | 2 | -55°C~150°C TJ | Tube | 2004 | HEXFET® | e3 | Discontinued | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 超低电阻 | DUAL | 鸥翼 | 260 | 30 | IRF7309PBF | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 1.4W | N and P-Channel | SWITCHING | 50m Ω @ 2.4A, 10V | 1V @ 250μA | 520pF @ 15V | 25nC @ 4.5V | 30V | N-CHANNEL AND P-CHANNEL | MS-012AA | 4A | 0.05Ohm | 16A | 30V | METAL-OXIDE SEMICONDUCTOR | 1.4W | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||
![]() | IRF9910PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 10A 12A | 2 | 15 ns | -55°C~150°C TJ | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 20V | 2W | 鸥翼 | 10A | IRF9910PBF | Dual | 增强型MOSFET | 2W | 2 N-Channel (Dual) | SWITCHING | 13.4m Ω @ 10A, 10V | 2.55V @ 250μA | 900pF @ 10V | 11nC @ 4.5V | 14ns | 7.5 ns | 12A | 2.55V | 20V | 0.0093Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 2.55 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||
![]() | FCAB21520L1 | Panasonic Electronic Components | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 10-SMD, No Lead | 10-SMD | 150°C | Tape & Reel (TR) | 活跃 | 1 (Unlimited) | 3.8W Ta | 2 N-Channel (Dual) | 1.4V @ 1.64mA | 5250pF @ 10V | 38nC @ 4V | Standard | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMC3025LNS-7 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 8-PowerVDFN | 7.2A Ta 6.8A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101 | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 260 | 30 | 1.2W Ta | N and P-Channel Complementary | 25m Ω @ 7A, 10V, 28m Ω @ 7A, 10V | 2V @ 250μA | 500pF @ 15V 1188pF @ 15V | 4.6nC @ 4.5V, 9.5nC @ 4.5V | 30V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AO5600E | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | SILICON | 600mA 500mA | 1 | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | Obsolete | 1 (Unlimited) | 6 | 380mW | DUAL | FLAT | R-PDSO-F6 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | N and P-Channel | SWITCHING | 650m Ω @ 500mA, 4.5V | 1V @ 250μA | 45pF @ 10V | 1nC @ 4.5V | 20V | N-CHANNEL AND P-CHANNEL | 500mA | 0.75Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||
AOC2870 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 4-XDFN | -55°C~150°C TJ | Tape & Reel (TR) | AlphaMOS | 不用于新设计 | 1 (Unlimited) | 1.4W | 2 N-Channel (Dual) Common Drain | 1.3V @ 250μA | 11.5nC @ 4.5V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AOP609 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | -55°C~150°C TJ | Tube | Obsolete | 1 (Unlimited) | 2.5W | N and P-Channel | 60m Ω @ 4.7A, 10V | 3V @ 250μA | 570pF @ 30V | 7nC @ 10V | 60V | 3.5A | 逻辑电平门 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ALD110814SCL | Advanced Linear Devices Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 16-SOIC (0.154, 3.90mm Width) | 16 | 12mA 3mA | 10 ns | 0°C~70°C TJ | Tube | 2005 | EPAD® | yes | 活跃 | 1 (Unlimited) | 500mW | unknown | 500mW | 4 N-Channel, Matched Pair | 500 Ω @ 5.4V | 1.42V @ 1μA | 2.5pF @ 5V | 3mA | 10.6V | 10V | Standard | ROHS3 Compliant |
NTLJD3181PZTBG
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
NTLUD3191PZTBG
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
TSM6968SDCA RVG
Taiwan Semiconductor Corporation
分类:Transistors - FETs, MOSFETs - Arrays
ALD110904PAL
Advanced Linear Devices Inc.
分类:Transistors - FETs, MOSFETs - Arrays
NTL4502NT1
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
NTHD4102PT3G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
AON6924
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
NTHD5902T1
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
SP8J2FU6TB
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
TSM9926DCS RLG
Taiwan Semiconductor Corporation
分类:Transistors - FETs, MOSFETs - Arrays
PHN210,118
NXP USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
IRF7324PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF7331TRPBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF7304PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF7907PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
TSM200N03DPQ33 RGG
Taiwan Semiconductor Corporation
分类:Transistors - FETs, MOSFETs - Arrays
IRF9362TRPBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF7309PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF9910PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
FCAB21520L1
Panasonic Electronic Components
分类:Transistors - FETs, MOSFETs - Arrays
DMC3025LNS-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
AO5600E
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
AOC2870
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
AOP609
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
ALD110814SCL
Advanced Linear Devices Inc.
分类:Transistors - FETs, MOSFETs - Arrays
